Toshiba MG250YD2YMS3 2200V Dual SiC MOSFET
Toshiba Electronics Europe GmbH ("Toshiba") has developed a new
silicon carbide (SiC) MOSFET with an embedded Schottky barrier diode (SBD)
specifically designed for 1500V DC applications like photovoltaic (PV)
inverters, electric vehicle (EV) chargers, high frequency DC/DC converters, and
energy storage systems. This new device aims to simplify inverter designs and
increase power density, resulting in a reduced size and weight.
Traditionally, three-level inverters have lower switching losses as the
off-state voltage across the switching devices is half the line voltage.
However, two-level inverters are simpler, smaller, and lighter due to fewer
switching modules. The challenge lies in finding semiconductor devices with
higher breakdown voltage to meet the applied voltage requirement, which is the
line voltage. In this aspect, the new device-based two-level inverter achieved
higher frequency operation and lower power loss compared to conventional
three-level silicon (Si) IGBT inverters.
The new dual SiC MOSFET module, named MG250YD2YMS3, has a VDSS rating of 2200V and can
support a continuous drain current (ID) of 250A, with a pulsed operation (IDP)
of 500A. It has an isolation (Visol) rating of 4000Vrms and can operate at
channel temperatures (Tch) up to 150ºC.
The MG250YD2YMS3 offers low
conduction loss, with a typical drain-source on-voltage (VDS(on)sense) of 0.7V.
It also minimizes switching losses, with typical turn-on and turn-off losses of
14mJ and 11mJ, respectively. As a result, the need for thermal management is
reduced, leading to smaller inverters.
In the MG250YD2YMS3 module, the
impurity concentration and thickness of the drift layer have been optimized to
maintain the same relationship between the on-resistance (RDS(ON)) and the
breakdown voltage as existing products. This optimization also enhances
immunity to cosmic rays, which is crucial for PV systems. Furthermore, the
embedding of SBDs with clamped parasitic PN junctions between the p-base
regions and the n-drift layer ensures reliability in reverse conduction
conditions.
The developed all-SiC module has significantly lower switching energy loss
compared to equivalent silicon modules. In comparison, the new SiC module
achieves double the frequency of a conventional Si IGBT and a 37% lower loss
when comparing a two-level SiC inverter to a three-level Si inverter.
For more information about ordering the MG250YD2YMS3, please visit our website: MG250YD2YMS3 product link: https://www.bonchip.com/product/Toshiba/MG250YD2YMS3.html.
