Aehr Receives Wafer Level Test and Burn-in System Order for GaN Devices Engineering
Aehr Test Systems, a foremost supplier of semiconductor test and burn-in solutions globally, is proud to announce the reception of an inaugural order from a prominent worldwide semiconductor device supplier, targeting GaN power devices within the electric vehicle and power infrastructure sectors. This initial purchase of a FOX-NP wafer level test and burn-in system along with a FOX WaferPak Aligner, marks the introduction of another significant client to Aehr's roster, one that leverages FOX products for critical wafer-level testing and burn-in operations on wide bandgap semiconductors. Shipping and installation of the FOX-NP system, encompassing the FOX WaferPak Aligner, are slated for the ongoing fiscal quarter.
As the first GaN-procuring customer, the said company chose Aehr due to its unparalleled offering of a comprehensive solution capable of subjecting thousands of devices--still in their wafer stage--to stringent thermal and electrical stress. Aehr's avant-garde technology is instrumental in detecting vital geolocation data across the wafer while inciting early life failures, thereby mitigating future field failures, all without compromising the longevity or reliability of the functioning devices.
Gayn Erickson, President, and CEO of Aehr Test Systems shared insight, "Following an intense and prolonged assessment of our FOX wafer level test systems for their silicon carbide devices, the client has opted to commence with our FOX-NP system for assessing the long-term reliability and failure rates of their GaN devices. They are also utilizing our technology to validate their production extrinsic failure screening process for devices where safety, reliability, and security are paramount. A decisive factor in their choice was the 100% compatibility of the FOX-NP system with the high-volume production-intended Aehr FOX-XP system, supporting all crucial testing modes for both GaN and silicon carbide devices. The possibility for high-voltage (up to 2,000 volts) full wafer testing without the risk of electrical arcing is a conspicuous benefit of our distinctive patented technology.
Similar to silicon carbide, GaN MOSFETs, recognized for their high-efficiency power conversion, are particularly effective for low-power devices such as consumer electronics and automotive power systems, regardless of vehicle propulsion. Industry analysts and tech communities anticipate GaN MOSFETs to eventually supplant silicon as the preferred power converter for solar panel applications.
Both gallium nitride and silicon carbide devices boast superior intrinsic reliability, rendering them ideal for automotive and industrial uses. However, they are susceptible to higher early life failure rates connected to material and process variables. By integrating a rigorous stress test or 'burn-in' on every device, suppliers are able to eliminate these early life failures, aligning product reliability with customer expectations—a protocol not exclusive to these, but also common to CPUs, memory chips, and various sensors utilized in automotive and industrial settings."
Aehr empowers its customers to execute essential testing and qualification processes for semiconductors prone to early life failures, by imposing electrical stress on every device throughout the wafer, and simultaneously managing up to 18 wafers with the FOX-XP production test and burn-in system. This incorporates thousands of meticulously calibrated electrical sources and measuring devices per wafer, while operating within a precisely controlled thermal environment per wafer via a specialized thermal chuck—a signature feature of Aehr's patented technology.
The FOX-NP complements the production-oriented FOX-XP, sharing test 'Blades' which allow for seamless correlation between the FOX-NP and FOX-XP outcomes. Suitable for a range of test configurations, like the WaferPak Contactors for full wafer or the DiePakTM Carriers for singulated die/module tests, the FOX systems are designed for the functional test and burn-in/cycling of leading-edge devices like silicon carbide and gallium nitride power semiconductors, optical components, sensors, flash memories, microcontrollers, and other avant-garde integrated circuits, whether in wafer or singulated die/module formats.
